no code implementations • 17 Feb 2021 • Marilena Vivona, Giuseppe Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte
The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism.
Materials Science Applied Physics
no code implementations • 16 Dec 2020 • Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs.
Band Gap Materials Science