Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

no code implementations • 17 Feb 2021 • Marilena Vivona, Giuseppe Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte

The forward current-voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism.

Materials Science Applied Physics

Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing

no code implementations • 10 Nov 2020 • Salvatore Sanzaro, Corrado Bongiorno, Paolo Badalà, Anna Bassi, Giovanni Franco, Patrizia Vasquez, Alessandra Alberti, Antonino La Magna

We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion.

Applied Physics Materials Science